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Volumn 34, Issue 10, 1986, Pages 7295-7306

Electronic structure of the CaF2/Si(111) interface

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Indexed keywords


EID: 0000955786     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.34.7295     Document Type: Article
Times cited : (186)

References (65)
  • 50
    • 84926266902 scopus 로고    scopus 로고
    • 348, 143 (1975).
  • 51
    • 84926263772 scopus 로고    scopus 로고
    • For s polarization the light was incident normal to the sample; for p polarization the sample was turned around so that the light was incident 60degr from the sample normal with A vec in the plane of incidence. Electrons were collected in a 85degr (full angle) cone which was centered around the sample normal for p polarization and 60degr off normal for s polarization.
  • 56
    • 0001559783 scopus 로고
    • The electron-hole interaction is 0.9 eV for the F 2p valence exciton [see, ]. Increased screening will reduce the electron-hole interaction at the interface.
    • (1972) Phys. Rev. B , vol.5 , pp. 662
    • Rubloff, G.W.1
  • 64
    • 84926268623 scopus 로고    scopus 로고
    • The onset was determined by taking an energy of 0.2 eV (resolution of the spectrometer and the monochromator) below the onset of the valence bands of Fig. 10.
  • 65
    • 84926267518 scopus 로고    scopus 로고
    • An alternative model for the charge transfer is conceivable where the F layer next to the interface is missing and donates its electrons to the Ca interface layer, but it is very difficult to make such a model consistent with our core-level and Auger-electron results.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.