Ballistic transport in p-type GaAs

Applied Physics Letters

Volumn 75, Issue 14, 1999, Pages 2085-2087

  Xie, Zhijian ^a   Lyon, S A ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000940639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124924     Document Type: Article

References (13)

1. M. Heiblum, M. I. Nathan, D. C. Thomas, and C. M. Knoedler, Phys. Rev. Lett. 55, 2200 (1985).
2. K. Seo, M. Heiblum, C. M. Knoedler, J. E. Oh, J. Pamulapati, and P. Bhattacharya, IEEE Electron Device Lett. 10, 73 (1989).
3. B. Brill and M. Heiblum, Phys. Rev. B 54, R17280 (1996).
4. C. Rauch, G. Strasser, K. Unterrainer, and E. Gornik, Appl. Phys. Lett. 70, 649 (1997).
5. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, and E. Gornik, Phys. Status Solidi B 204, 393 (1997).
6. S. A. Lyon and C. L. Petersen, Semicond. Sci. Technol. 7, B21 (1992).
7. M. V. Petrov and S. A. Lyon, Appl. Phys. Lett. 70, 3263 (1997).
8. E. Conwell and V. F. Weisskopf, Phys. Rev. 77, 388 (1950).
9. H. Brooks, Adv. Electron. Electron Phys. 7, 85 (1955).
10. W. Fawcett, A. D. Boardman, and S. Swain, J. Phys. Chem. Solids 31, 1963 (1970).
11. C. Erginsoy, Phys. Rev. 76, 1013 (1950).
12. H. S. W. Massey and B. L. Moiseiwitsch, Phys. Rev. 78, 180 (1950).
13. R. B. Dingle, Philos. Magn. 46, 831 (1955).