Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height

Diamond and Related Materials

Volumn 6, Issue 2-4, 1997, Pages 398-402

  Baumann, P K ^a   Bozeman, S P ^a   Ward, B L ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Electron affinity; Metal diamond interfaces; Schottky barrier height

Indexed keywords

EID: 0000918235     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(96)00601-2     Document Type: Article

References (27)

1. F.J. Himpsel, D.E. Eastman, P. Heimann and J.F. van der Veen, Phys Rev., B 24 (1981) 7270.
2. B.B. Pate, M.H. Hecht, C. Binns, I. Lindau and W.E. Spicer, J. Vac. Sci. Technol., 21, (1982) 364.
3. P.K. Baumann, T.P. Humphreys and R.J. Nemanich, in C.H. Carter, G. Gildenblat, S. Nakamura and R.J. Nemanich (eds.), Diamond, SiC and Nitride Wide Bandgap Semiconductors, Mater. Res. Soc. Proc. 339, Pittsburgh, PA, 1994, pp. 69-74.
4. J. van der Weide and R.J. Nemanich, Appl. Phys. Lett., 62 (1993) 1878.
5. J. van der Weide, Z. Zhang, P.K. Baumann, M.G. Wensell, J. Bernholc and R.J. Nemanich, Phys. Rev., B 50 (1994) 5803.
6. P.K. Baumann and R.J. Nemanich, in P.K. Bachmann, I.M. Buckley-Golder, J.T. Glass and M. Kamo (eds.), J. Proc. of the 5th European Conference on Diamond, Diamond-like and Related Materials, in Diamond Relat. Mater., 4 (1995) 802.
7. J. van der Weide and R.J. Nemanich, J. Vac. Sci. Technol., B 10 (1992) 1940.
8. J. van der Weide and R.J. Nemanich, Phys. Rev., B 49 (1994) 13629.
9. P.K. Baumann and R.J. Nemanich, Appl. Surf. Sci., 104/105 (1996) 267.
10. P.K. Baumann and R.J. Nemanich, in C. Beetz, A. Collins, K. Das, D. Dreifus, T. Humphreys and P. Pehrsson (eds.), Diamond for Electronic Applications, Mater. Res. Symp. Soc. Proc. 416, Pittsburgh, PA, 1996, pp. 157-162.
11. P.K. Baumann, S.P. Bozeman, B.L. Ward and R.J. Nemanich, in C. Brandt, D.K. Gaskill and R.J. Nemanich (eds.), III-Nitride, SiC, and Diamond Materials for Electronic Devices, Mater. Res. Soc. Proc., Pittsburgh, PA, 1996, in press.
12. P.K. Baumann, T.P. Humphreys, R.J. Nemanich, K. Ishibashi, N.R. Parikh, L.M. Porter and R.F. Davis, in P.K. Bachmann, I.M. Buckley-Golder, J.T. Glass and M. Kamo (eds.), Proc. of the 4th European Conference on Diamond, Diamond-like and Related Materials, in Diamond Relat. Mater., 3 (1994) 883.
13. F.J. Himpsel, P. Heimann and D.E. Eastman, Sol. State Commun., 36, (1980) 631.
14. B.B. Pate, W.E. Spicer, T. Ohta and I. Lindau, J. Vac. Sci. Technol., 17 (1980) 1087.
15. M. Marchywka, P.E. Pehrsson, S.C. Binari and D. Moses, J. Electrochem. Soc., 140 (2) (1993) L19.
16. E.H. Rhoderick and R.H. Williams, Metal-Semiconductor Contacts, Clarendon, Oxford, 1988.
17. C. Weiser, Surf. Sci., 20 (1970) 143.
18. S.C. Erwin and W.E. Pickett, Surf. Coat. Technol., 47 (1991) 487.
19. S.C. Erwin and W.E. Pickett, Solid State Commun., 81 (1992) 891.
20. W.E. Pickett and S.C. Erwin, Phys. Rev., B 41 (1990) 9756.
21. W.E. Pickett and S.C. Erwin, Superlatt. Microsruct., 7 (1990) 335.
22. W.E. Pickett, M.R. Pederson and S.C. Erwin, Mater. Sci. Eng., B 74 (1992) 87.
23. W.R.L. Lambrecht, Physica, B 185 (1993) 512.
24. M.W. Geis, J.C. Twichell, J. Macaulay and K. Okano, Appl. Phys. Lett., 67 (1995) 1.
25. W. Zhu, G.P Kockanski, S. Jin and L. Siebels, J. Appl. Phys., in press.
26. S.P. Bozeman, P.K. Baumann, B.L. Ward, M.J. Powers, J.J Cuomo, R.J. Nemanich and D.L Dreifus, in P.K. Bachmann, I.M. Buckley-Golder, J.T. Glass and M. Kamo (eds.), Proc. of the 6th European Conference on Diamond, Diamond-like and Related Materials, in Diamond Relat. Mater., 5 (1996) 802.
27. R. Gomer, Field Emission and Field Ionization, Cambridge, MA, 1961.