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In order to check that (Formula presented) in principle, influences the shape of (Formula presented) we carried out similar experiments on the samples with low-Mn content ((Formula presented) 0.025, and 0.032) and revealed a strong increase of the duration (up to 30 μs for (Formula presented) and (Formula presented)) of (Formula presented) with the decrease of x and B. The time evolution of (Formula presented) in this case was obviously governed by the spin-lattice relaxation time, in contrast to the experiments described in the present paper.
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In order to check that (Formula presented) in principle, influences the shape of (Formula presented) we carried out similar experiments on the samples with low-Mn content ((Formula presented) 0.025, and 0.032) and revealed a strong increase of the duration (up to 30 μs for (Formula presented) and (Formula presented)) of (Formula presented) with the decrease of x and B. The time evolution of (Formula presented) in this case was obviously governed by the spin-lattice relaxation time, in contrast to the experiments described in the present paper.
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In our recent preliminary experiments (unpublished) in thick (2 mm) GaAs substrates and the heater h opposite to the layer with QW’s, we observe signals (Formula presented) which are much shorter than in the present work. This also confirms that relatively long duration of signals (Formula presented) (Fig. 55) is connected with the specific geometry of the experiments.
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In our recent preliminary experiments (unpublished) in thick (2 mm) GaAs substrates and the heater h opposite to the layer with QW’s, we observe signals (Formula presented) which are much shorter than in the present work. This also confirms that relatively long duration of signals (Formula presented) (Fig. 55) is connected with the specific geometry of the experiments.
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