Study of chemically assisted ion beam etching of GaN using HCl gas

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 1250-

  Ping, A T ^a   Adesida, I ^a   Asif Khan, M ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b APA Optronics   (United States)

Author keywords

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Indexed keywords

EID: 0000891848     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114387     Document Type: Article

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