Treatment of InP surfaces in radip frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3563-3574

  Parmeter, J E ^a   Shul, R J ^a   Howard, A J ^a,b   Miller, P A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000873894     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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