Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes

Journal of Physics Condensed Matter

Volumn 11, Issue 2, 1999, Pages 455-463

  Goldberg, Yu A ^a   Konstantinov, O V ^a   Obolensky, O I ^a   Petelina, T V ^a   Posse, E A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000861309     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/2/011     Document Type: Article

References (9)

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2. Xu J Y, Salvador A, Kim W, Fan Z, Lu S, Tang H and Morkoc H 1997 Appl. Phys. Lett. 71 2154
3. Edmond J A, Kong H S and Carter C H 1993 Physica B 185 453
4. Hamamatsu Photonix Catalogue: Photodiodes 1995
5. Blakemore J S and Sarver C E 1968 Phys. Rev. 173 767
6. Goldberg Yu A, Posse E A, Tsarenkov B V and Schul'ga M I 1991 Sov. Phys.-Semicond. 25 266
7. Dmitruk L N and Borkovskaya O Yu 1979 Mikroelectronica 8 68 (in Russian)
8. Smith B L and Abbot M 1972 Solid State Electron. 15 365
9. Landolt-Börnstein New Series 1982 vol 17a, ed O Madelung (New York: Springer)