The third subband population in modulation-doped InGaAs/InAlAs heterostructures

Journal of Applied Physics

Volumn 82, Issue 12, 1997, Pages 6107-6109

  Li, Hanxuan ^a   Wang, Zhanguo ^a   Liang, Jiben ^a   Xu, Bo ^a   Wu, Ju ^a   Gong, Qian ^a   Jiang, Chao ^a   Liu, Fengqi ^a   Zhou, Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000840158     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366482     Document Type: Article

References (10)

1. A. Tabata, T. Benyttou, and G. Guillot, Appl. Surf. Sci. 63, 182 (1993).
2. R. Cingolani, W. Stolz, and K. Ploog, Phys. Rev. B 40, 2950 (1989).
3. F. Meseuer, J. C. Maan, and K. Ploog, Phys. Rev. B 35, 8509 (1988).
4. W. Z. Shen, W. G. Tang, Z. Y. Li, S. C. Shen, and A. Dimoulas, J. Cryst. Growth 152, 28 (1995).
5. W. Li, Z. Wang, A. Song, and J. Liang, J. Appl. Phys. 78, 593 (1995).
6. J. M. Gilperez, J. L. Sanchez-Rojas, and E. Munoz, J. Appl. Phys. 76, 5931 (1994).
7. P. W. Yu, B. Jogai, T. J. Rogers, P. A. Martin, and J. M. Ballngall, J. Appl. Phys. 76, 7535 (1994).
8. H. Brugger, H. Mussig, C. Wolk, K. Kern, and D. Heitmann, Appl. Phys. Lett. 59, 2739 (1991).
9. V. Drout, M. Gendry, C. Santinaliand, and X. Letartre, IEEE Trans. Electron Devices 43, 1326 (1996).
10. Y. H. Zhang and K. Ploog, Phys. Rev. B 45, 14 069 (1992).