Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films

Solid State Communications

Volumn 106, Issue 5, 1998, Pages 315-320

  Damodara Das, V ^a   Gopal Ganesan, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BISMUTH COMPOUNDS; THERMAL EFFECTS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

QUANTUM SIZE EFFECT; TEMPERATURE DEPENDENCE; THICKNESS DEPENDENCE;

THIN FILMS;

EID: 0000817868     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00002-7     Document Type: Article

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