Atomic displacement processes in irradiated amorphous and crystalline silicon

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3101-3103

  Nordlund, K ^a   Averback, R S ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000800009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119104     Document Type: Article

References (11)

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3. F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
4. K. Nordlund, N. Runeberg, and D. Sundholm, Phys. Rev. B (to be published).
5. F. Ercolessi and J. B. Adams, Europhys. Lett. 26, 583 (1994).
6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Matter (Pergamon, New York, 1985).
7. We checked that this was the lowest-energy amorphous structure of the potential with annealing steps.
8. J. Keinonen, K. Arstila, and P. Tikkanen, Appl. Phys. Lett. 60, 228 (1992).
9. J. F. Ziegler, SRIM-96 computer code, private communication.
10. P. A. Fedders, D. A. Drabold, and S. Klemm, Phys. Rev. B 45, 4048 (1992).
11. K. Nordlund, Comput. Mater. Sci. 3, 448 (1995).