Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6425-6430

  Gilard, O ^a   Lozes Dupuy, F ^a   Vassilieff, G ^a   Bonnefont, S ^a   Arguel, P ^a   Barrau, J ^b   Le Jeune, P ^b  

^a LAAS CNRS   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000793729     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371706     Document Type: Article

References (17)

1. J. P. Loehr and J. Singh, IEEE J. Quantum Electron. 29, 2583 (1993).
2. A. R. Adams, Electron. Lett. 22, 249 (1986).
3. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. V. Dongen, IEEE J. Quantum Electron. 30, 477 (1994).
4. N. K. Dutta, J. Appl. Phys. 54, 1236 (1983).
5. J. Wang, P. von Allmen, J. P. Leburton, and K. J. Linden, IEEE J. Quantum Electron. 31, 864 (1995).
6. R. I. Taylor, R. A. Abram, M. G. Burt, and C. Smith, Semicond. Sci. Technol. 5, 90 (1990).
7. W. W. Lui, T. Yamanaka, Y. Yoshikuni, K. Yokoyama, and S. Seki, IEEE J. Quantum Electron. 29, 1544 (1993).
8. W. W. Lui, T. Yamanaka, Y. Yoshikuni, S. Seki, and K. Yokoyama, Phys. Rev. B 48, 8814 (1993).
9. C. H. Grein, P. M. Young, M. E. Flatté, and H. Ehrenreich, J. Appl. Phys. 78, 7143 (1995).
10. A. D. Andreev and G. G. Zegrya, Appl. Phys. Lett. 70, 601 (1997).
11. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers (Van Nostrand Reinhold, New York, 1993).
12. Y. Jiang, M. C. Teich, and W. I. Wang, Appl. Phys. Lett. 57, 2922 (1990).
13. R. Eppenga, M. F. H. Schuurmans, and S. Colak, Phys. Rev. B 36, 1554 (1987).
14. M. Takeshima, J. Appl. Phys. 43, 4114 (1972).
15. O. Guard, F. Lozes-Dupuy, G. Vassilieff, J. Barrau, and P. Le Jeune, J. Appl. Phys. 84, 2705 (1998).
16. J. Barrau, O. Issanchou, M. Brousseau, A. Mircea, and A. Ougazzaden, J. Appl. Phys. 77, 821 (1995).
17. E. P. O'Reilly and A. R. Adams, IEEE J. Quantum Electron. 30, 366 (1994).