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1
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0025418730
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(1990)
J. Mater. Res.
, vol.5
, pp. 852
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Bauer, E.G.1
Dodson, B.W.2
Ehrlich, D.J.3
Feldman, L.C.4
Flynn, C.P.5
Geis, M.W.6
Harbison, J.P.7
Matyi, R.J.8
Peercy, P.S.9
Petroff, P.M.10
Phillips, J.M.11
Stringfellow, G.B.12
Zangwill, A.13
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4
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84931541522
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M. Volmer, Kinetik der Phasenbildung (Steinkopff, Dresden, 1939); for a modern discussion, see R. Kern, in Crystal Growth in Science and Technology, edited by H. Arend and J. Hulliger (Plenum, New York, 1989), pp. 143–165.
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9
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84931541535
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A. A. Chernov and T. Nishinaga, in Morphology of Crystals, edited by I. Sunagawa (Terra, Tokyo, 1987), Part A, pp. 207–267; P. Nozie`res, in Solids Far From Equilibrium, edited by C. Godre`che (Cambridge University Press, Cambridge, England, 1991), pp. 1–154.
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18
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84931541536
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A. Zangwill, Physics at Surfaces (Cambridge University Press, Cambridge, England, 1988); V. Bortolani, N. H. March, and M. P. Tosi, Interaction of Atoms and Molecules with Solid Surfaces (Plenum, New York, 1990); V. P. Zhdanov, Elementary Physiochemical Processes on Solid Surfaces (Plenum, New York, 1991).
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26
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84931541523
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See, e.g., D. E.Wolf, Institut für Festkörperphysik-Bulletin 39/1991 (unpublished);
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30
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84931541524
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In their original discussion, EW considered gravity as the source of local downward relaxation for massive particles.
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49
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25544468271
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Knockout and, more generally, non-SOS deposition processes have been observed in realistic molecular dynamics simulations for both metals [, ] and semiconductors , 245, 353, Z. Zhang, H. Metiu, Surf. Sci.
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(1991)
Phys. Rev. B
, vol.44
, pp. 8950
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Gilmore, C.M.1
Sprague, J.A.2
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54
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5644275583
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edited by, K. S. Liang, M. P. Anderson, R. F. Bruinsma, G. Scoles, Materials Research Society, Pittsburgh
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(1992)
Interface Dynamics and Growth
, pp. 189-198
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Zangwill, A.1
Luse, C.N.2
Vvedensky, D.D.3
Wilby, M.R.4
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69
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84931541525
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The fact that our height variables hi assume discrete values rather than continuous values does not invalidate the results of this reference [R. F. Fox (private communication)].
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77
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0010114397
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edited by, R. Jullien, J. Kertész, P. Meakin, D. E. Wolf, Nova Science, Commack
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(1993)
Surface Disordering: Growth, Roughening, and Phase Transitions
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Eaglesham, D.1
Gilmer, G.H.2
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84
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84931541526
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(private communication). Here is a simple argument: relatively unstable (stable) growth occurs whenever the nucleation of new islands on top of existing islands is enhanced (suppressed)compared to the situation with no step barriers. When EL=0 and EU>0, adatoms deposited on top of an existing island are hindered from attaching to the island's edge and thus are more likely to meet other adatoms to form a stable nucleus. Conversely, when EL=0 and EU<0, adatoms spend relatively less time on top of existing islands so that this renucleation probability is reduced. When EL>0 and EU=0, renucleation similarly is suppressed because deposited adatoms are hindered from joining a critical nucleus atop an existing nucleus. The reverse is true when EL<0 and EU=0 and the rate at which a critical nucleus converts to a stable nucleus by adatom attachment is enhanced.
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Wolf, D.E.1
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94
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84931541529
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We assume that overhangs are negligible as well since relaxing the SOS restriction is expected to yield λ != 0. See Ref. [24].
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