The influence of TMA and SiH4 on the incorporation rate of Ga in AlxGa1-xN crystals grown from TMG and NH3

Journal of Crystal Growth

Volumn 77, Issue 1-3, 1986, Pages 424-429

  Sayyah, Keyvan ^a   Chung, Bu Chin ^a   Gershenzon, Murray ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000771703     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(86)90333-7     Document Type: Article

References (17)

1. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
2. The Equilibrium Pressure of N2 over GaN