In- and out-going resonant Raman scattering from the cavity polaritons of semiconductor quantum microcavities

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 19, 1997, Pages 12429-12433

  Tribe, W ^a   Baxter, D ^a   Skolnick, M ^a   Mowbray, D ^a   Fisher, T ^a   Roberts, J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000770113     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.12429     Document Type: Article

References (17)

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5. T. A. Fisher, A. M. Afshar, M. S. Skolnick, D. M. Whittaker, and J. S. Roberts, Phys. Rev. B 53, R10 469 (1996).
6. See, e.g., A. J. Shields, M. Cardona, R. Nötzel, and K. Ploog, Phys. Rev. B 46, 10 490 (1992).
7. E. Burstein, D. L. Mills, A. Pinczuk, and S. Ushioda, Phys. Rev. Lett. 22, 348 (1969).
8. Polariton mediation of resonant light scattering is also reviewed by C. Weisbuch and R. G. Ulbrich, in Light Scattering in Solids, edited by M. Cardona and G. Guntherodt (Springer, Berlin, 1982), Vol. 3, p. 207.
9. In semiconductor QW’s exciton decay into a one-dimensional continuum of photon states can occur due to the lack of translational symmetry along the growth direction (Formula presented) [see, e.g., L. C. Andreani, F. Tassone, and F. Bassani, Solid State Commun. 77, 641 (1991)]. As a result the coupled mode polaritons are no longer the eigenstates of the system and the third-order perturbation treatment is applicable. For a QMC, the photon states are also quantized along (Formula presented) and the polariton picture is restored.
10. A. J. Shields, C. Trallero-Giner, M. Cardona, H. T. Grahn, K. Ploog, V. A. Haisler, D. A. Tenne, N. T. Moshegov, and A. I. Toropov, Phys. Rev. B 46, 6990 (1992).
11. A. Fainstein, B. Jusserand, and V. Thierry-mieg, Phys. Rev. Lett. 75, 3764 (1995). In this publication, Raman phenomena in resonance with the optical modes of the cavity is reported.
12. For (Formula presented) grown on GaAs, the redshift of the GaAs-like LO phonon energy due to alloying is approximately balanced by the blueshift due to strain [see F. Iikawa et al., Solid State Commun. 68, 211 (1988)]. Therefore the GaAs-like LO phonon is not confined to the quantum wells. As the polariton states also extend throughout the cavity, the Raman scattering does not take place solely in the quantum wells, though it is still dominated by scattering near the center of the cavity due to the maximum in the photon field.
13. A unified treatment of polariton RRS has been published by R. Zeyher, C. S. Ting, and J. L. Birman, Phys. Rev. B 10, 1725 (1974) in which the asymptotic scattering states are the external photons, connected to the internal polaritons by appropriate boundary conditions. However, even in this approach polariton final state damping is not included. The limitations of this work are discussed by Bendow in Ref. 8, p. 88.
14. V. Savona, C. Piermarocchi, A. Quattropani, F. Tassone, and P. Schwendimann, Phys. Rev. Lett. 78, 4474 (1997).
15. R. Houdré, J. L. Gibernon, P. Pellandini, R. P. Stanley, U. Oesterle, C. Weisbuch, J. O’Gorman, B. Roycroft, and M. Ilegems, Phys. Rev. B 52, 7810 (1995).
16. B. Sermage et al., Phys. Rev. B 53, 16 516 (1996), have measured polariton lifetimes of (Formula presented) for resonant excitation conditions in the low power limit. For the present high-power excitation, screening of the exciton-photon interaction will occur, with the lifetime approaching the exciton-free-carrier decay time of (Formula presented) For the present purposes we assume a lifetime of 100 ps; 1 ns would give an order of magnitude higher density.
17. A. Fainstein, B. Jusserand, and V. Thierry-mieg, Phys. Rev. Lett. 78, 1576 (1997).