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Volumn 43, Issue 11, 1991, Pages 9377-9380

Stress-induced layer-by-layer growth of Ge on Si(100)

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Indexed keywords


EID: 0000766946     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.43.9377     Document Type: Article
Times cited : (157)

References (20)
  • 19
    • 84927894953 scopus 로고    scopus 로고
    • This more recent work includes refinements which are believed to make more accurate than the earlier calculation [R. D. Meade (private communication)].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.