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5
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0018334662
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The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
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(1980)
Journal of Non-Crystalline Solids
, vol.35-36
, pp. 255
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Fang, C.J.1
Gruntz, K.J.2
Ley, L.3
Cardona, M.4
Demond, F.J.5
Müller, G.6
Kalbitzer, S.7
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9
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84927837863
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S. Oguz, Ph.D. thesis, Harvard University, 1981. Oguz determiend a proportionality factor between NH and tint α dE. We have converted this into a proportionality factor between NH and tint ( α / ω ) d omega, which is the more commonly used form.
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16
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84914306034
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Infrared absorption and thermal evolution study of hydrogen bonding in a-SiH
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(1989)
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
, vol.7
, pp. 1267
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Maley, N.1
Myers, A.2
Pinarbasi, M.3
Leet, D.4
Abelson, J.R.5
Thornton, J.A.6
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22
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84926578937
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edited by, P. C. Taylor, M. J. Thompson, P. G. LeComber, Y. Hamakawa, A. Madan, MRS Symposia Proceedings No. 192, Materials Research Society, Pittsburgh
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(1990)
Amorphous Silicon Technology
, pp. 663
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Maley, N.1
Szafranek, I.2
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25
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0347276843
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Effect of hydrogen on the microstructural, optical, and electronic properties of a-Si:H thin films deposited by direct current magnetron reactive sputtering
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(1989)
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
, vol.7
, pp. 1210
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Pinarbasi, M.1
Maley, N.2
Kushner, M.J.3
Myers, A.M.4
Abelson, J.R.5
Thornton, J.A.6
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42
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84927837859
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It is possible to show this using a probabilistic agrument—in a-Si:H the dangling-bond concentration is small enough ( <= 1016 cm)-3 that we can consider all Si atoms to be fourfold coordinated. Then, if x is the hydrogen content, SiH2 and SiH3 concentrations vary as x2(1-x)3 and x3(1-x)2, respectively. We consider a monohydride to be isolated if the n nearest neighbors of a H are all Si atoms, i.e., the isolated monohydride content varies as x(1-x)n. We do not know of a well-defined value for n, but for n >= 4 a plot of polyhydride versus clustered monohydride concentration shows a nearly linear relationship for hydrogen contents up to 30ndash 35 %.
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52
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84927837858
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We take NSi= 3.8 times 1022 cm-3 so that NH+ NSi= 5 times 1022 cm-3. The number of Si atoms bonded to H is 2.2 times 1021 and 5 times 1021 cm-3 for the 2000- and 2100-cm-1 modes, respectively, if we assume that the 2100 cm-1 is only due to dihydrides. This corresponds to app 18% of the Si atoms being bonded to H atoms.
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