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Volumn 45, Issue 23, 1992, Pages 13367-13377

Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon

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EID: 0000737116     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.45.13367     Document Type: Article
Times cited : (563)

References (53)
  • 9
    • 84927837863 scopus 로고    scopus 로고
    • S. Oguz, Ph.D. thesis, Harvard University, 1981. Oguz determiend a proportionality factor between NH and tint α dE. We have converted this into a proportionality factor between NH and tint ( α / ω ) d omega, which is the more commonly used form.
  • 42
    • 84927837859 scopus 로고    scopus 로고
    • It is possible to show this using a probabilistic agrument—in a-Si:H the dangling-bond concentration is small enough ( <= 1016 cm)-3 that we can consider all Si atoms to be fourfold coordinated. Then, if x is the hydrogen content, SiH2 and SiH3 concentrations vary as x2(1-x)3 and x3(1-x)2, respectively. We consider a monohydride to be isolated if the n nearest neighbors of a H are all Si atoms, i.e., the isolated monohydride content varies as x(1-x)n. We do not know of a well-defined value for n, but for n >= 4 a plot of polyhydride versus clustered monohydride concentration shows a nearly linear relationship for hydrogen contents up to 30ndash 35 %.
  • 52
    • 84927837858 scopus 로고    scopus 로고
    • We take NSi= 3.8 times 1022 cm-3 so that NH+ NSi= 5 times 1022 cm-3. The number of Si atoms bonded to H is 2.2 times 1021 and 5 times 1021 cm-3 for the 2000- and 2100-cm-1 modes, respectively, if we assume that the 2100 cm-1 is only due to dihydrides. This corresponds to app 18% of the Si atoms being bonded to H atoms.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.