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Volumn 51, Issue 24, 1995, Pages 17535-17541

Band gap of porous silicon

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Indexed keywords


EID: 0000702163     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.51.17535     Document Type: Article
Times cited : (64)

References (34)
  • 20
    • 84927303823 scopus 로고    scopus 로고
    • The conversion factor between σ and FWHM is 8ln2.
  • 25
    • 84927303821 scopus 로고    scopus 로고
    • Assuming a convolution of Gaussian line shapes where the square of the total linewidth is given by the sum of the squares of the broadening contributions of the valence and conduction band.
  • 26
    • 84927303820 scopus 로고    scopus 로고
    • A theoretical estimate for this width can be taken from Ref. protect, Ref. 19, where a multiphonon process is suggested to be responsible for the infrared transition. Such a process leads to a line with a FWHM of 8ln2 S Eph. Taking the Huang Rhys parameter S=15 and the phonon energy Eph=0.02 eV from, Ref. 19, a width of 0.18 eV close to the experimental value of 0.2 eV is obtained.
  • 34
    • 84927303819 scopus 로고    scopus 로고
    • Al.L. Efros (private communication).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.