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Volumn 55, Issue 26, 1989, Pages 2763-2765

Model for diffusion and trapping of hydrogen in crystalline silicon

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EID: 0000699872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.101947     Document Type: Article
Times cited : (25)

References (13)
  • 5
    • 34547246031 scopus 로고
    • The [formula omitted] data extrapolations we use are reduced by a factor of [formula omitted] to represent deuterium diffusion in accord with the isotope effect.
    • (1956) Physica , vol.22 , pp. 849
    • Van Wieringen, A.1    Warmoltz, N.2
  • 10
    • 0000623738 scopus 로고
    • In contrast, the data in Fig. 2 of Ref. 2 yield [formula omitted] and indicate that process conditions differ from those of Ref. 4 analyzed here. Hydrogen levels in excess of [formula omitted] are observed over much of the region [formula omitted] suggesting that [formula omitted] formation may need to be included in analysis of this data. Additional analyses of the influence of [formula omitted] may be found in Ref. 3 and in the paper by, It is worth noting that [formula omitted] in Figs. 1 and 2 of Ref. 2 is predicted correctly with the same values of [formula omitted] used here when [formula omitted] formation is included.
    • (1985) J. Electron. Mater , vol.14a , pp. 759
    • Hall, R.N.1
  • 11
    • 84952856880 scopus 로고    scopus 로고
    • In general, [formula omitted] and R reflect the charge states of the diffusing hydrogen species and of the traps, and mediate the relationship between [formula omitted] and [formula omitted] so a similar analysis should be possible for n-type material. Preliminary analysis shows that qualitative agreement of a model including [formula omitted] formation and the data for re-type material in Fig. 2 of Ref. 2 is obtained with an R of about 1000 Å for the [formula omitted] reaction and less than [formula omitted] for the effective trap radius for P.


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