Low-cost 320×240 uncooled IRFPA using conventional silicon IC process

Opto-Electronics Review

Volumn 7, Issue 4, 1999, Pages 297-303

  Ishikawa, T ^a   Ueno, M ^a   Endo, K ^a   Nakaki, Y ^a   Hata, H ^a   Sone, T ^a   Kimata, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Fill factor; Forward biased characteristics; PN junction diode; Silicon compatible process; SOI; Uncooled IRFPA

Indexed keywords

EID: 0000675174     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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