Studies of low coverage adsorption of Li on Si(001): Observation of negative differential resistance and electron trapping

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 1015-1018

  Johansson, Mikael K J ^a   Gray, Struan M ^a   Johansson, Lars S O ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000658515     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588445     Document Type: Article

References (28)

1. Metallization and Metal-Semiconductor Interfaces, Vol 195 of NATO Advanced Study Institute, Series B: Physics, edited by I. P. Batra (Plenum, New York, 1989).
2. H. Tochihara and Y. Murata, Surf. Sci. Lett. 215, L323 (1989).
3. L. S. O. Johansson and B. Reihl, Surf. Sci. 287/288, 524 (1993).
4. L. S. O. Johansson, D. Purdie, H. Bernhoff, and B. Reihl, in Proceedings of 4th International Conference on the Formation of Semiconductor Interfaces (World Scientific, Singapore, 1994), p. 118.
5. L. S. O. Johansson, T. M. Grehk, S. M. Gray, M. Johansson, and A. S. Flodström, Nucl. Instrum. Methods B 97, 364 (1995).
6. Y. Hasegawa, I. Kamiya, T. Hashizume, T. Sakurai, H. Toshihara, M. Kubota, and Y. Murata, Phys. Rev. B 41, 9688 (1990).
7. T. Hashizume, Y. Hasegawa, I. Sumita, and T. Sakurai, Surf. Sci. 246, 189 (1991).
8. T. M. Grehk, L. S. O. Johansson, S. M. Gray, M. Johansson, and A. S. Flodström, Phys. Rev. B 52, 16593 (1995).
9. M. Eckhardt, H. Kleine, and D. Fick, Surf. Sci. 319, 219 (1994).
10. H. Kleine, M. Eckhardt, H. J. Jänsch, and D. Fick, Surf. Sci. 323, 51 (1995).
11. C. Y. Kim, K. S. Shin, K. D. Lee, and J. W. Chung, Surf. Sci. 324, 8 (1995).
12. M. K.-J. Johansson, S. M. Gray, and L. S. O. Johansson, Phys. Rev. B 53, 1362 (1996).
13. Omicron Vakuumphyskik GmbH, Taunusstein, Germany.
14. Perkin-Elmer, Physical Electronics Division, MN.
15. Virginia Semiconductors Inc., VA.
16. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
17. A. Brodde, T. Bertrams, and H. Neddermeyer, Phys. Rev. B 47, 4508 (1993).
18. N. D. Lang, in Nanosources and Manipulation of Atoms Under High Fields and Temperatures: Applications, edited by V. T. Binh, N. Garcia, and K. Dransfeld (Kluwer Academic, Dordrecht, the Netherlands, 1993), p. 177.
19. Calculated from the lattice constant of a bcc Li crystal as given in physics tables, e.g., C. Nordling and J. Osterman, Physics Handbook (Studentlitteratur, Lund, Sweden, 1987).
20. 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 201.
21. P. Bedrossian, D. M. Chen, K. Mortensen, and J. A. Golovchenko, Nature 342, 258 (1989).
22. I.-W. Lyo and P. Avouris, Science 245, 1369 (1989).
23. H.-J. Müssig, D. Krüger, S. Hinrich, and P. O. Hansson, Surf. Sci. 314, L884 (1994).
24. M. Tsukada, K. Kobayashi, N. Isshiki, and H. Kageshima, Surf. Sci. Rep. 13, 265 (1991).
25. M. E. Weiland and R. H. Koch, Appl. Phys. Lett. 48, 724 (1986).
26. R. H. Koch and R. J. Hamers, Surf. Sci. 181, 333 (1987).
27. K. R. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984).
28. D. G. Cahill and R. J. Hamers, J. Vac. Sci. Technol. B 9, 564 (1991).