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Volumn 64, Issue 5, 1990, Pages 579-582

Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors

(2) Fleetwood, D M a Scofield, John H b

a SANDIA NATIONAL LABORATORIES (United States)

b OBERLIN COLLEGE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000655342 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.64.579 Document Type: Article

Times cited : (139)

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32
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