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Volumn 65, Issue 2, 1994, Pages 165-167

Is there an elastic anomaly for a (001) monolayer of InAs embedded in GaAs

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EID: 0000635493 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.112660 Document Type: Article

Times cited : (59)

References (25)

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- For metal films the thickness dependence has been studied, e.g., by
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12
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- For consistency with Ref. 3, we calculate [formula omitted] from the theoretical [formula omitted] ratio of the unit cell, attributing all of the c-axis expansion to the InAs layer. With actual layer spacings, [formula omitted] increases by less than 0.5 percentage points locally at the interface, because of a slight expansion of InAs bonds there (accompanied by a similar contraction of GaAs bonds). This effect is seen generally at bulk semiconductor interfaces (Ref. 4)

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- Massies, J.¹ Grandjean, N.²

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21
- 84951347327
- Reference 3 cites results of Ref. 16 as evidence of theoretical support for an elastic anomaly in the monolayer limit. Specifically cited are the InAs bond lengths for the cubic zinc-blende structure (2.56 Å) and for 1 ML of InAs in GaAs (2.55 Å). However, Dr. Shiraishi has informed us that the quoted bond length for the embedded InAs layer was scaled by the ratio of the experimental zinc-blende GaAs bond length to their calculated zinc-blende GaAs bond length. Their calculated bond length for the embedded layer is 2.49 Å, corresponding to [formula omitted]

24
- 84951347326
- With the refined analysis, the sum of the individual spacings agrees well with the overall shift. Further, application of the method (Ref. 19) to simulated data containing the three excess In percentages we suggested, showed the two largest to be above the threshold of detectability

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