The Influence of Temperature, Fluence, Dose Rate, and Helium Production on Defect Accumulation and Swelling in Silicon Carbide

ASTM Special Technical Publication

Volumn STP 1405, Issue , 2001, Pages 775-785

  Kishimoto, Hirotatsu ^a   Katoh, Yutai ^b   Kohyama, Akira ^b   Ando, Masami ^c  

^a KYOTO UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

dual beam irradiation method; ion irradiation; silicon carbide; swelling

Indexed keywords

HELIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BOMBARDMENT; NEUTRON IRRADIATION; POLYCRYSTALLINE MATERIALS; PROFILOMETRY; SWELLING; TEMPERATURE DISTRIBUTION;

DAMAGE LEVEL; DISPLACEMENT DAMAGES; DOSE RATE; DUAL-BEAM; DUAL-BEAM IRRADIATION METHOD; DUAL-BEAM IRRADIATIONS; FLUENCES; HELIUM PRODUCTION; IONS IRRADIATION; IRRADIATION METHODS;

SILICON CARBIDE;

EID: 0000629715     PISSN: 00660558     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1520/STP10571S     Document Type: Conference Paper

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