Studies of GaxIn1-xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

Journal of Crystal Growth

Volumn 77, Issue 1-3, 1986, Pages 367-373

  Gomyo, A ^a   Kobayashi, K ^a   Kawata, S ^a   Hino, I ^a   Suzuki, T ^a   Yuasa, T ^b  

^a NEC CORPORATION   (Japan)

^b Optoelectronics Joint Research Laboratory ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000628748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(86)90325-8     Document Type: Article

References (24)

1. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
2. GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
3. MOCVD-Grown Al0.5In0.5P-Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K
4. 661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer
5. Orientation Dependence of LPE Growth Behavior of GaxIn1-xP on (100) and (111)B GaAs Substrates
6. Long-Wavelength Optical Phonons in Ga_{1-x}In_{x}P