All solid source molecular beam epitaxy growth of GaxIn1-xAsyP1-y/InP lasers using phosphorus and arsenic valved cracking cells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2244-2247

  Baillargeon, J N ^a   Cheng, K Y ^a,b   Cho, A Y ^a   Chu, S N G ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000623364     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588910     Document Type: Article

References (12)

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