Metal-oxide-semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2836-2839

  Koster T ^a   Hadam, B ^a   Hofmann, K ^a   Gondermann, J ^a   Stein, J ^a   Hu, S ^a   Altmeyer, S ^a   Spangenberg, B ^a   Kurz, H ^a  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000617349     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589739     Document Type: Article

References (9)

1. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1994).
2. A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe, Appl. Phys. Lett. 67, 2957 (1995).
3. Effendi Leobandung, Lingjie Guo, and Y. Chou, Appl. Phys. Lett. 67, 2338 (1995).
4. H. Grabert, Z. Phys. B 84, 143 (1991).
5. K. Nakazato and H. Ahmed, Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama 1994 (unpublished), pp. 313-315.
6. P. J. M. van Bentum, H. van Kempen, L. E. C. van de Lemput, and P. A. A. Teunissen, Phys. Rev. Lett. 60, 369 (1988).
7. R. Wilkins, E. Ben-Jacob, and R. C. Jaklevic, Phys. Rev. Lett. 63, 801 (1989).
8. E. van der Drift, T. Zijlstra, R. Cheung, K. Werner, and S. Radelaar, Microelectron. Eng. 23, 343 (1994).
9. D. B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices 24, 1008 (1987).