Study of effect of SiH4 gas heating during growth of hydrogenated microcrystalline silicon on SiO2 by plasma-enhanced chemical-vapor deposition

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 4976-4983

  Arai, Takeshi ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000613718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363542     Document Type: Article

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