Charge collection and trapping in low-temperature silicon detectors

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8179-8186

  Penn, M J ^a   Dougherty, B L ^a,c   Cabrera, B ^a   Clarke, R M ^a   Young, B A ^b  

^a STANFORD UNIVERSITY   (United States)

^b SANTA CLARA UNIVERSITY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000603286     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362552     Document Type: Review

References (18)

1. See Proceedings of the Fifth International Workshop on Low-Temperature Detectors, Berkeley, CA, 29 July-3 August 1993, J. Low Temp. Phys. 93 (1993).
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13. Assuming that the trapping cross sections are not too different in Ge, which is true for trapping on ionized impurities, then recent data in Ge are applicable. See T. Shutt, N. Wang, B. Ellman, Y. Giraud-Heraud, C. Stubbs, P. D. Barnes, Jr., A. Cummings, A. DaSilva, J. Emes, A. E. Lange, R. R. Ross, B. Sadoulet, G. Smith, W. Stockwell, S. White, B. A. Young, and D. Yvon, Phys. Rev. Lett. 69, 3531 (1992); T. Shutt, Ph.D. thesis, University of California, Berkeley, 1993 (unpublished).
14. Assuming that the trapping cross sections are not too different in Ge, which is true for trapping on ionized impurities, then recent data in Ge are applicable. See T. Shutt, N. Wang, B. Ellman, Y. Giraud-Heraud, C. Stubbs, P. D. Barnes, Jr., A. Cummings, A. DaSilva, J. Emes, A. E. Lange, R. R. Ross, B. Sadoulet, G. Smith, W. Stockwell, S. White, B. A. Young, and D. Yvon, Phys. Rev. Lett. 69, 3531 (1992); T. Shutt, Ph.D. thesis, University of California, Berkeley, 1993 (unpublished).
15. S. Ramo, Proc. IRE 27, 584 (1939).
16. B. Cabrera (personal communication).
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18. P.D. Barnes, Jr. and CDMS Collaboration, Sixth International Workshop on Low-Temperature Detectors, Beatenberg/Interlaken, Switzerland, 28 August-1 Sept. 1995 (to appear in Nucl. Instrum. Methods A).