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Volumn 26, Issue 4, 1975, Pages 173-175

Electron-hole pair creation energy in SiO2

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Indexed keywords


EID: 0000599112     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.88104     Document Type: Article
Times cited : (141)

References (12)
  • 12
    • 84950917934 scopus 로고    scopus 로고
    • Since the analysis described in this letter was carried out, J. R. Srour, O. L. Curtis, Jr., and K. Y. Chiu [IEEE Trans. Nucl. Sci. (to be published)] have reported additional experiments on [formula omitted] films for which a different processing technique was employed.
    • A greater percentage of carrier collection at high electric fields was achieved. Presumably, this increased carrier collection is due to a reduced concentration of recombination centers in these oxides grown by the different processing technique. These authors conclude that the carrier collection at the higher fields establishes an upper limit of [formula omitted] for the electron-hole pair creation energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.