Quantum-well boron and phosphorus diffusion profiles in silicon

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1003-1008

  Bagraev, N T ^a   Gehlhoff, W ^b   Klyachkin, L E ^a   Naser A ^b   Rykov, S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Impurity diffusion; Silicon; Surface injection of self interstitials and vacancies

Indexed keywords

BORON; DOPING (ADDITIVES); MONOCRYSTALLINE SILICON; PHOSPHORUS; SEMICONDUCTOR QUANTUM WELLS; SILICON; VACANCIES;

DIFFUSION PROCESS; DIFFUSION PROFILES; DIFFUSION TEMPERATURE; IMPURITY DIFFUSION; PHOSPHORUS DIFFUSION; SELF INTERSTITIALS; SURFACE INJECTIONS; VACANCY DIFFUSION MECHANISM;

DIFFUSION;

EID: 0000594110     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1003     Document Type: Article

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