Structural characterization of μc-Si:H films produced by R.F. magnetron sputtering

Microelectronic Engineering

Volumn 43-44, Issue , 1998, Pages 627-634

  Cerqueira, M F ^a   Ferreira, J A ^a   Andritschky, M ^a   Costa, Manuel F M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

Author keywords

Microcrystalline silicon; Raman; TEM; X ray

Indexed keywords

EID: 0000576844     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00236-6     Document Type: Article

References (13)

1. M.F. Cerqueira, M. Andritschky, L. Rebouta, J.A. Ferreira, M.F. Da Silva, Vacuum 46(12) (1995) 1385.
2. Th.H. de Keijser, J.I. Langford, E.F. Mittemeyer, A.B.P. Rogels, J. Appl. Crystallogr. 11 (1978) 10.
3. R.K. Grupta, T.R. Anantharaman, Z. Metall. 62 (1971) 732.
4. R.K. Nandi, S.P. Sen Gupta, J. Appl. Cryst. 12 (1978) 6.
5. H.P. Klug, L.E. Alexander, X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, Wiley, New York, 1980.
6. I.H. Campbell, P.M. Fauchet, Solid State Commun. 58 (1986) 739.
7. J.W. Ager, D. Kveirs, G.M. Rosenblatt, Phys. Rev. B 43(8) (1990) 6491.
8. H. Xia, Y.L. He, L.C. Wang, W Zhang, X.K. Zhang, D. Feng, J. Appl. Phys. 78(11) (1995) 6705.
9. Y. Kanemitsu, H. Uto, et al., Phys. Rev. B 48(4) (1993) 2827.
10. X. Huang, F. Ninio, L.J. Brown, S. Prawer, J. Appl. Phys. 77(11) (1995) 5910.
11. R. Tubino, L. Piseri, G. Zerbi, J. Chem. Phys. 56 (1972) 1022.
12. M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, X. Wang, J. Appl. Phys. 75 (1994) 651.
13. D.R. dos Santos, I.L. Torriani, Solid State Commun. 85 (1993) 307.