K4C60 is a zero-gap semiconductor - a resonant Raman study

Physica C: Superconductivity and its applications

Volumn 235-240, Issue PART 4, 1994, Pages 2477-2478

  Ruani, G ^a   Guptasarma, P ^a   Taliani, C ^a   Fischer, J ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000576082     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4534(94)92459-7     Document Type: Article

References (17)

1. Conducting films of C60 and C70 by alkali-metal doping
2. Charge transfer from potassium into the t1g band of C60
3. Electrical transport in Na, K, Rb, and Cs fullerides: Phase formation, microstructure, and metallicity
4. Electronic states at the Fermi level of doped C60
5. Preparation and structure of the alkali-metal fulleride A4C60
6. Cohesive mechanism and energy bands of solid C_{60}
7. Electronic structure of crystalline K_{6}C_{60}
8. Theoretical Fermi-Surface Properties and Superconducting Parameters for K3C60
9. Pseudo-gap at the Fermi level in K_{3}C_{60} observed by photoemission and inverse photoemission
10. Electronic Correlation Effects and Superconductivity in Doped Fullerenes
11. Evidence for endohedral muonium in K_{x} C_{60} and consequences for electronic structure
12. Giant vibrational resonances in A6C60 compounds
13. Synthesis, structure, and superconducting properties of single-phase Rb3C60. A new, convenient method for the preparation of M3C60 superconductors