Preparation of n-type conductive transparent thin films of [formula omitted] with delafossite-type structure by pulsed laser deposition

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 3067-3069

  Ibuki, Shuntaro ^a   Yanagi, Hiroshi ^a   Ueda, Kazushige ^a   Kawazoe, Hiroshi ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARRIER CONCENTRATION; CONDUCTIVE FILMS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; HALL MOBILITY; INDIUM COMPOUNDS; PULSED LASER DEPOSITION; PULSED LASERS; SILVER COMPOUNDS; SINGLE CRYSTALS; THIN FILMS; TIN;

DELAFOSSITES; ELECTRICAL CONDUCTIVITY; HIGH ELECTRICAL CONDUCTIVITY; NEAR-ULTRAVIOLET REGIONS; OPTIMIZED CONDITIONS; SINGLE CRYSTAL SUBSTRATES; TRANSPARENT THIN FILM; TYPE STRUCTURES;

FILM PREPARATION;

EID: 0000574166     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287404     Document Type: Letter

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