Dynamic effects in RHEED from MBE grown GaAs(001) surfaces

Surface Science

Volumn 169, Issue 1, 1986, Pages 176-196

  Larsen, P K ^a   Dobson, P J ^a   Neave, J H ^a   Joyce, B A ^a   Bolger B ^a   Zhang, J ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000570536     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(86)90745-4     Document Type: Article

References (27)

1. Film Deposition by Molecular-Beam Techniques
2. Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity
3. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
4. Resonance effects in low and high energy electron diffraction by crystals