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Volumn 52, Issue 24, 1995, Pages 17238-17242

Photocarrier recombination in AlyIn1-yAs/AlxGa1-xAs self-assembled quantum dots

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Indexed keywords


EID: 0000562301     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.52.17238     Document Type: Article
Times cited : (64)

References (20)
  • 16
    • 84926572173 scopus 로고    scopus 로고
    • C. Van Hoof, Ph.D. thesis, Katholieke Universiteit Leuven, 1992.
  • 17
    • 84926541652 scopus 로고    scopus 로고
    • Modeling the QD PL emitted at an energy E and temperature T, considering the Gaussian distribution of the ground-state energies centered at E0 with a broadening GAMMA, and the thermionic emission out into the barrier material with band-gap energy Eb we obtain PL(E,T) α exp lcurl - [(E-E0) / Γ ]2rcurl / [ 1 + ρ exp lcurl - ( Eb- E)/kBT rcurl ], where ρ approx 2 times 108.
  • 18
    • 84926545616 scopus 로고    scopus 로고
    • A 30% reflection at the sample surface and a 0.5% absorption in the wetting layer were included in the calculation of Φ ( Iex).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.