The structure of porous gallium phosphide

Semiconductors

Volumn 32, Issue 2, 1998, Pages 213-217

  Zavaritskaya, T N ^a   Kvit, A V ^a   Mel'nik, N N ^a   Karavanskii V A ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000545682     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187548     Document Type: Article

References (11)

1. Y. Kanemitsu, Phys. Rep. 263, 1 (1995).
2. F. Koch and V. Petrova-Koch in Porous Silicon, edited by Z. C. Zeng and R. Tsu, World Scientific, Singapore, 1994, p. 133.
3. K. N. El'tsov, V. A. Karavanskiǐ, and V. V. Martynov, JETP Lett. 63, 119 (1996).
4. A. I. Belogorokhov, V. A. Karavanskiǐ, A. N. Obraztsov, and V. Yu. Timoshenko, JETP Lett. 60, 274 (1994).
5. A. Anneda, A. Sepri, V. A. Karavanskii, I. M. Tiginyanu, and V. M. Ichizli, Appl. Phys. Lett. 67, 3316 (1995).
6. Etching of Semiconductors: Collection of Articles [Russian translation], Mir, Moscow, 1965.
7. B. D. Luft, V. A. Perevoshchikov, L. N. Vozmilova, I. A. Sverdlin, and K. G. Marin, Physicochemical Methods of Treatment of Semiconductor Surfaces [in Russian], Radio i svyaz', Moscow, 1982.
8. V. S. Dneprovskiǐ, V. A. Karavanskiǐ, V. I. Klimov, and A. P. Maslov, JETP Lett. 57, 406 (1993).
9. A. Mooradian and G. B. Wright, Solid State Commun. 4, 431 (1966).
10. J. B. Valdez and S. Ushioda, Phys. Rev. Lett. 38, 1089 (1977).
11. V. M. Agranovich and L. Milns, Surface Polaritons [in Russian], Nauka, Moscow, 1985.