Effect of nonequilibrium LO phonons and hot electrons on far-infrared intraband absorption in-type GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 8, 1998, Pages R4222-R4225

  Pellemans, H ^a   Planken, P ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000515397     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.R4222     Document Type: Article

References (14)

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12. Our calculations are similar to the calculations presented in Ref. 1. Starting from second-order perturbation theory, rate equations are derived for the intraband absorption/emission rates. Starting from first-order perturbation theory, rate equations are derived for intervalley scattering and LO-phonon absorption and emission. The calculations incorporate static screening, possible degeneracy of the electron gas, and assume that the conduction band is parabolic and that the electron distribution is a Fermi distribution. All required material parameters of GaAs, like the effective electron masses, dielectric constants, and intervalley deformation potential are known and can be found in the literature. We used an LO-phonon lifetime of 2 ps, a value published by F. Vallée, Phys. Rev. B 49, 2460 (1994). Details of the calculations will be published elsewhere.
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