Photoelectron escape depth and inelastic secondaries in high-temperature superconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 17, 1999, Pages 11191-11192

  Ding, H ^a   Campuzano, J C ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000495457     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.11191     Document Type: Article

References (6)

1. Z.-X. Shen and D S. Dessau, Phys. Rep.253, 1 (1995);
2. M. Randeria and J C. Campuzano, in Proceedings of the International School of Physics “Enrico Fermi,” Varenna, 1997 (North Holland, New York, in press).
3. L. Z. Liu, R O. Anderson, and J W. Allen, J. Phys. Chem. Solids52, 1473 (1991).
4. N. Nucker, Phys. Rev. B39, 12 379 (1989).
5. J. M. Ziman, Principles of the Theory of Solids (Cambridge University Press, Cambridge, England, 1972), p. 265.
6. S. Hufner, Photoelectron Spectroscopy (Springer-Verlag, Berlin, 1996), p. 142.