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Volumn 30, Issue 6, 1995, Pages 644-649

The Impact of NMOSFET Hot-Carrier Degradation on CMOS Analog Subcircuit Performance

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EID: 0000486611     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.387067     Document Type: Article
Times cited : (21)

References (18)
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  • 2
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  • 3
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    • B. Doyle, M. Bourcerie, C. Bergonzoni, R. Benecchi, A. Bravis, K. Mistry, and A. Boudou, “The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors,” IEEE Trans. Electron Devices, vol. 37, no. 8, pp. 1869–1876, Aug. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.8 , pp. 1869-1876
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  • 5
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  • 6
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    • Relation between the hot carrier lifetime of transistors and CMOS SRAM products
    • J. van der Pol and J. Koomen, “Relation between the hot carrier lifetime of transistors and CMOS SRAM products,” in Proc. Int. Reliability Physics Symp., 1990, pp. 178-185.
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    • van der Pol, J.1    Koomen, J.2
  • 9
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    • A 10-b 50 MHz pipelined CMOS A/D converter with S/H
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    • Chan, V.-H.1    Scharf, B.2    Chung, J.3
  • 13
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  • 14
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  • 17
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    • Takeda, E.1    Suzuki, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.