Synchrotron radiation-induced surface-conductivity of SiO2 for modification of plasma charging

Applied Physics Letters

Volumn 76, Issue 16, 2000, Pages 2191-2193

  Cismaru, C ^a,c   Shohet, J L ^a   McVittie, J P ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Stanford University   (United States)

^c Conexant Systems Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000464027     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126330     Document Type: Article

References (9)

1. R. A. Gdula, IEEE Trans. Electron Devices 26, 644 (1979).
2. T. Yunogami, T. Mizutani, K. Suzuki, and S. Nishimatsu, Jpn. J. Appl. Phys., Part 1 28, 2172 (1989).
3. T. Mizutani, in International Symposium on Plasma Process-Induced Damage, edited by K. P. Cheung, M. Nakamura, and C. T. Gabriel (NCCAVS, Sunnyvale, CA, 1996), p. 157.
4. C. Cismaru and J. L. Shohet, Appl. Phys. Lett. 74, 2599 (1999).
5. S. A. Bell and D. W. Hess, J. Electrochem. Soc. 139, 2904 (1992).
6. A. W. Flounders, S. A. Bell, and D. W. Hess, J. Electrochem. Soc. 140, 1414 (1993).
7. K. Hashimoto, Jpn. J. Appl. Phys., Part 1 32, 6109 (1993).
8. T. Tatsumi, S. Fukuda, and S. Kadomura, Jpn. J. Appl. Phys., Part 1 33, 2175 (1994).
9. R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960).