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Volumn 54, Issue 5, 1996, Pages 4292-4298

Elementary Sisyphus process close to a dielectric surface

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Indexed keywords


EID: 0000457291     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.54.4292     Document Type: Article
Times cited : (48)

References (34)
  • 29
    • 85037222488 scopus 로고    scopus 로고
    • We attribute the small feature which remains visible around 83 ms to atoms having bounced elastically in the EW and being transferred after the bounce to (Formula presented)=4 by the stray light scattered from the prism
    • We attribute the small feature which remains visible around 83 ms to atoms having bounced elastically in the EW and being transferred after the bounce to (Formula presented)=4 by the stray light scattered from the prism.
  • 30
    • 85037216705 scopus 로고    scopus 로고
    • This value is in good agreement (within 10%) with the Rabi frequency expected from the laser intensity and waist measured experimentally
    • This value is in good agreement (within 10%) with the Rabi frequency expected from the laser intensity and waist measured experimentally.
  • 32


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.