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Volumn 49, Issue 5, 1994, Pages 4455-4465

Simulations of rf glow discharges in SF6 by the relaxation continuum model: Physical structure and function of the narrow-gap reactive-ion etcher

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[No Author keywords available]

Indexed keywords


EID: 0000445536     PISSN: 1063651X     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevE.49.4455     Document Type: Article
Times cited : (109)

References (43)
  • 1
    • 84926880947 scopus 로고    scopus 로고
    • Dry Etch Technology in Microelectronic Device Fabrication, edited by T. Tokuyama (Sangyo Tosyo, Tokyo, 1992) (in Japanese).
  • 27
    • 84926917531 scopus 로고    scopus 로고
    • J.K. Olthoff, R.J. Van Brunt, Y. Wang, L.D. Doverspike, and R.L. Champion, in Nonequilibrium Effects in Ion and Electron Transport(Ref. [24]), pp. 229 244.
  • 30
    • 84926917530 scopus 로고    scopus 로고
    • Y. Nakamura, in Nonequilibrium Effects in Ion and Electron Transport(Ref. [24]), pp. 197 210.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.