MeV-ion-induced damage in Si and its annealing

Nuclear Inst. and Methods in Physics Research, B

Volumn 59-60, Issue PART 1, 1991, Pages 572-583

  Tamura, M ^a   Ando, T ^b   Ohyu, K ^b  

^a Optoelectronics Technology Research Laboratory   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000432556     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(91)95282-I     Document Type: Article

References (26)

1. Electronic defects in silicon induced by MeV carbon and oxygen implantations
2. Impurity Gettering by Implanted Carbon in Silicon
3. Gettering of Impurities in Silicon
4. The Diffusivity and Solubility of Oxygen in Silicon
5. Impurity Interactions with Dislocations in Silicon
6. Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior
7. Lattice distortions induced by carbon in silicon
8. Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR