Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy

Applied Physics Letters

Volumn 73, Issue 13, 1998, Pages 1871-1873

  Kaczer, B ^a   Im, H J ^a   Pelz, J P ^a   Wallace, R M ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000430943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122310     Document Type: Article

References (20)

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15. Electrons crossing back into the metal are not considered in this simple model.
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18. The charge trapping density given by this formula effectively saturates, which may not be the case in our experiment. The formula, however, satisfies the required dependence on injected charge and we use it for its mathematical convenience.
19. th vs r measurement. During this time the density of the charged traps may have slightly decreased.
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