SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Physical Review B

Volumn 46, Issue 20, 1992, Pages 13119-13130

Atomic bonding in amorphous hydrogenated silicon carbide alloys: A statistical thermodynamic approach

(3) Efstathiadis, H a Yin, Z a Smith, F W a

a CITY COLLEGE OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000417667 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.46.13119 Document Type: Article

Times cited : (40)

References (31)

1
- 0001410265
- (1987) Phys. Rev. B , vol.35 , pp. 8080
- Mui, K.¹ Smith, F.W.²

2
- 0000137628
- (1991) Phys. Rev. B , vol.43 , pp. 4507
- Yin, Z.¹ Smith, F.W.²

3
- 84957234619
- Free energy model for the analysis of bonding in a-SixNyHz alloys
- (1991) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films , vol.9 , pp. 972
- Yin, Z.¹ Smith, F.W.²

4
- 0020163342
- (1982) J. Appl. Phys. , vol.53 , pp. 5273
- Tawada, Y.¹ Tsuge, K.² Kondo, M.³ Okamoto, H.⁴ Hamakawa, Y.⁵

5
- 0001439502
- (1987) Phys. Rev. B , vol.35 , pp. 8089
- Mui, K.¹ Basa, D.K.² Smith, F.W.³ Corderman, R.⁴

6
- 0023439420
- (1987) Phys. Status Solidi B , vol.143 , pp. 345
- Bullot, J.¹ Schmidt, M.P.²

7
- 84927831753
- Philos. Mag. (to be published).
- Robertson, J.¹

8
- 0018442413
- (1979) Phys. Status Solidi B , vol.92 , pp. 99
- Wieder, H.¹ Cardona, M.² Guarnieri, C.R.³

9
- 0000908079
- (1988) Phys. Rev. B , vol.38 , pp. 9895
- Solomon, I.¹ Schmidt, M.P.² Tran-Quoc, H.³

10
- 0016092350
- (1974) Solid State Commun. , vol.15 , pp. 761
- Gorman, M.¹ Solin, S.A.²

11
- 0000228719
- (1991) J. Non-Cryst. Solids , vol.137-138 , pp. 71
- Smith, F.W.¹ Yin, Z.²

12
- 84927831752
- Single bond energies E (X-Y) for Si-Si, Si-C, C-C, and Si-H and atom heats of formation H0(X) for Si, C, and H have been obtained using the heats of formation H0 (300 K) of Si, C (diamond), H, SiC, and SiH4 as given in the JANAF Thermochemical Tables, 2nd ed., edited by D. R. Stull and H. R. Prophet (U.S. GPO, Washington, DC, 1971).

13
- 84927831751
- As pointed out in Ref. 5 of this paper, due to the different electronegativities of Si and C, Si-H bonds can be expected to be stronger in Si-centered tetrahedra containing C atoms, while C-H bonds should be weaker in C-centered tetrahedra containing Si atoms. The FEM can be extended to take these effects into account.

14
- 0040151712
- (1982) J. Phys. Chem. Solids , vol.43 , pp. 1071
- Onabe, K.¹

15
- 0021510604
- (1984) Philos. Mag. B , vol.50 , pp. 517
- Morimoto, A.¹ Kataoka, T.² Kumeda, M.³ Shimizu, T.⁴

16
- 4544383878
- (1974) J. Cryst. Growth , vol.27 , pp. 21
- Stringfellow, G.B.¹

17
- 37049085955
- (1986) J. Chem. Soc. Faraday Trans. 2 , vol.82 , pp. 567
- Long, L.H.¹ Pulford, C.I.²

18
- 33750282370
- R
- (1959) J. Chem. Phys. , vol.30 , pp. 1551
- Scace, I.¹ Slack, G.A.²

19
- 0023364594
- (1987) J. Non-Cryst. Solids , vol.92 , pp. 95
- Sotiropoulos, J.¹ Weiser, G.²

20
- 0024754665
- (1989) Thin Solid Films , vol.177 , pp. 253
- Kuhman, D.¹ Grammatica, S.² Jansen, F.³

21
- 0000383985
- (1992) Phys. Rev. B , vol.45 , pp. 1650
- Pascarelli, S.¹ Boscherini, F.² Mobilio, S.³ Evangelisti, F.⁴

22
- 84927831750
- Efstathiadis, H.¹ Smith, F.W.²

23
- 0026821395
- (1992) J. Non-Cryst. Solids , vol.139 , pp. 107
- Gurman, S.J.¹

24
- 0009010291
- (1988) Phys. Rev. B , vol.38 , pp. 10623
- Mui, K.¹ Smith, F.W.²

25
- 36549092290
- (1986) J. Appl. Phys. , vol.60 , pp. 4025
- Matsuda, A.¹ Yamaoka, T.² Wolff, S.³ Koyama, M.⁴ Imanishi, Y.⁵ Kataoka, H.⁶ Matsuura, H.⁷ Tanaka, K.⁸

26
- 84953964411
- Electronic and optical properties of a-Si1-xCxfilms prepared from a H2-diluted mixture of SiH4and CH4
- and R.
- (1990) Philosophical Magazine Part B , vol.62 , pp. 213
- Baker, S.H.¹ Spear, W.E.² Gibson, A.G.³

27
- 0003532838
- Structutral and electrical properties of silicon-based amorphous alloys
- (1987) Journal of Non-Crystalline Solids , vol.97-98 , pp. 1027
- Beyer, W.¹

28
- 84927831749
- Y. Catherine, Ph.D. thesis, 1981, quoted in Ref. 5 of this paper.

29
- 5344232268
- Influence of hydrogen on the evolution of structural properties of amorphous silicon carbide
- (1991) Journal of Non-Crystalline Solids , vol.137-138 , pp. 95
- DellaMea, G.¹ Demichelis, F.² Pirri, C.F.³ Rava, P.⁴ Rigato, V.⁵ Stapinski, T.⁶ Tresso, E.⁷

30
- 84927831748
- The predictions of the FEM actually depend only on the difference E(C-H)-E(Si-H) which appears in Ω2 and Ω3; see Eqs. (5) and (6). For example, the FEM can predict the results observed by Mui et al.. (Ref. 4), i.e., N(Si-H)/N(Si)=0.4 and N(C-H)/N(C)=1.3, if either E(C-H) is decreased from 4.60 to 4.20 eV or E(Si-H) is increased from 3.34 to 3.74 eV. Either change corresponds to a decrease of E(C-H)-E(Si-H) from 1.26 to 0.86 eV.

31
- 0020917481
- W. G., F. H.
- (1983) J. Electrochem. Soc. , vol.130 , pp. 2419
- Claassen, W.A.P.¹ Valkenburg, J.N.² Habraken, P.M.³ Tamminga, Y.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.