In situ measurement of interface supercooling during growth of Bi4Ge3O12 single crystals from melt

Instruments and Experimental Techniques

Volumn 41, Issue 5, 1998, Pages 735-738

  Golyshev, V D ^a   Gonik, M A ^a   Tsvetovskii, V B ^a  

^a All Russia Research Institute of Mineral Materials Synthesis   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000417382     PISSN: 00204412     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Golyshev, V.D., Lapo, L.M., Petrov, V.A., and Putilin, Yu.M., Prib. Tekh. Eksp., 1979, no. 5, p. 246.
2. Golyshev, V.D., Petrov, V.A., and Putilin, Yu.M., Prib. Tekh. Eksp., 1980, no. 5, p. 227.
3. Golyshev, V.D., Gonik, M.A., Petrov, V.A., and Putilin, Yu.M., Prib. Tekh. Eksp., 1982, no. 4, p. 227.
4. Golyshev, V.D. and Gonik, M.A., High Temp.-High Pressures, 1994, vol. 26, p. 595.
5. Golyshev, V.D. and Gonik, M.A., High Temp.-High Pressures, 1992, vol. 24, p. 367.
6. Golyshev, V.D. and Gonik, M.A., High Temp.-High Pressures, 1992, vol. 24, p. 669.
7. Golyshev, V.D. and Gonik, M.A., High Temp.-High Pressures, 1992, vol. 24, p. 677.
8. Golyshev, V.D. and Gonik, M.A., Cryst. Prop. Prep., 1991, vols. 36-38, p. 623.
9. Golyshev, V.D. and Gonik, M.A., Abstracts of Papers, Microgravity Science and Applications Session, Int. Aerospace Congress, Moscow, 1994; Grouch, R.K. and Polezhaev, V.I., Eds., Moscow, IPM RAS, 1995, p. 167.