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Volumn 186, Issue 2, 2001, Pages 215-220

First Principles Study of the Self-Interstitial Defect in Diamond

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EID: 0000410575     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200108)186:2<215::AID-PSSA215>3.0.CO;2-Y     Document Type: Article
Times cited : (17)

References (16)
  • 7
    • 0004086809 scopus 로고    scopus 로고
    • Chap. 6, Semiconductors and Semimetals, Ed. M. STAVOLA, Academic Press, Boston
    • R. JONES and P. R. BRIDDON, in: Identification of Defects in Semiconductors, Vol. 51A, Chap. 6, Semiconductors and Semimetals, Ed. M. STAVOLA, Academic Press, Boston 1998.
    • (1998) Identification of Defects in Semiconductors , vol.51 A
    • Jones, R.1    Briddon, P.R.2
  • 11
    • 1842755558 scopus 로고
    • Ph. D. Thesis, University of Reading
    • D. W. PALMER, Ph. D. Thesis, University of Reading, 1961.
    • (1961)
    • Palmer, D.W.1
  • 15
    • 0003707065 scopus 로고
    • INSPEC, Institute of Electrical Engineers, London (Chap. 5.2)
    • M. E. NEWTON, Properties and Growth of Diamond, INSPEC, Institute of Electrical Engineers, London 1994 (Chap. 5.2).
    • (1994) Properties and Growth of Diamond
    • Newton, M.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.