SCOPUS 정보 검색 플랫폼

Volumn 60, Issue 14, 1988, Pages 1406-1409

Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000392344 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.60.1406 Document Type: Article

Times cited : (548)

References (16)

1
- 33751406554
- For an extensive review, see
- (1982) Surf. Sci. Rep. , vol.2 , pp. 123
- Brillson, L.J.¹

4
- 34848919386
- Surface Studies by Scanning Tunneling Microscopy
- and 50, 120 (1983).
- (1982) Physical Review Letters , vol.49 , pp. 57
- Binnig, G.¹ Rohrer, H.² Gerber, Ch.³ Weibel, E.⁴

11
- 0000882976
- The Si–SiO2 interface: Correlation of atomic structure and electrical properties
- (1984) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films , vol.2 , pp. 574
- Hahn, P.O.¹ Henzler, M.²

12
- 0021466338
- (1984) J. Vac. Sci. Technol. B , vol.2 , pp. 445
- Waldrop, J.R.¹

13
- 84927380726
- The SB heights measured by the I -V method for the Au-Si and Au-GaAs heterostructures are in close agreement with the SB values for Au-Si, 0.8 eV (see Ref. 1), and for Au-GaAs, 0.85 eV (see Ref. 11). The Schottky-barrier lowering of approximately 0.04 eV (included in the analysis of Ref. 11) is not included for this comparison.

14
- 0002734970
- (1987) Surf. Sci. , vol.181 , pp. 55
- Kaiser, W.J.¹ Jaklevic, R.C.²

15
- 84927380725
- The commonly used I - V method measures a spatial average of SB height which is heavily weighted by small barrier-height regions because of the exponential dependence of heterojunction current on voltage. It is expected, therefore, that in the presence of heterogeneous interface properties, typical, single-location BEEM measurements may show larger SB heights than indicated by I - V measurements.

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