Heterostructures Based on Indium Selenides

Inorganic Materials

Volumn 32, Issue 8, 1996, Pages 827-829

  Katerinchuk, V N ^a   Kovalyuk, M E ^a   Ogorodnik, A D ^a  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000378614     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Katerinchuk, V.N. and Kovalyuk, M.E., Heterojunctions Based on p-InSe, Preprint of Frantsevich Inst. of Materials Science Problems, Nat. Acad. Sci. Ukraine, Kiev, 1993.
2. 3 with p-n Junctions Produced by Laser Irradiation, Ukr. Fiz. Zh. (Russ. Ed.), 1978, vol. 23, no. 4, pp. 685-687.
3. 3 Heterostructure, Dopov. Akad. Nauk Ukr. RSR, Ser. A: Fiz.-Mat. Tekh. Nauki, 1989, no. 7, pp. 69-71.
4. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series Group III: Crystal and Solid State Physics, vol. 17, Madelung, O., Ed., Berlin: Springer, 1983, pp. 77-79.
5. 3:Sn/n-Si Heterojunction, Fiz. Tech. Poluprovodn. (Leningrad), 1984, vol. 18, no. 12, pp. 2121-2124.
6. Bakumenko, V.L. and Chishko, V.F., Electrical Properties of Optical Contacts between Layered Semiconductors, Fiz. Tech. Poluprovodn. (Leningrad), 1977, vol. 11, no. 10, pp. 2000-2002.
7. Manasson, V.A., Electrical Properties of Semiconductor-Dielectric-Semiconductor Solar Cells, in Fizicheskie osnovy poluprovodnikovogo materialovedeniya (Physical Principles of Semiconductor Materials Research), Kiev: Naukova Dumka, 1982, pp. 85-92.