Temperature-frequency scaling in amorphous niobium-silicon near the metal-insulator transition

Physical Review Letters

Volumn 80, Issue 19, 1998, Pages 4261-4265

  Lee, Hok Ling ^a   Carini, John P ^a   Baxter, David V ^a   Grüner, George ^b  

^a INDIANA UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000371920     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.4261     Document Type: Article

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